| PART |
Description |
Maker |
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| 2SK3210 2SK3210S 2SK3210L |
Silicon N Channel MOS FET High Speed Power Switching
From old datasheet system
Silicon NPN Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SC2073A01 2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BU2725AF BU2725 |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BU2506DF |
Silicon Diffused Power Transistor
|
Philips
|
| BU4523AW |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BU2527AX |
Silicon Diffused Power Transistor
|
Philips
|
| BUJ103 BUJ103A |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUT211X |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
